用反向调制照明法分析光栅成像效应

提出了用反向调制照法明分析光栅成像效应的观点，研究了光栅系统的反向衍射干涉效应，成功地揭示了泰伯效应与劳效应的内在联系，并在白光双光栅衍射干涉的“消色效应”的基础上获得了白光扩展光源照明下白光光栅成像效应和具有实用意义的四光栅干涉系统。     

The Squeezing Effect in a Mesoscopic RLC Circuit

Using the path integral method we derive quantum wave function and quantum fluctuations of charge andcurrent in the mesoscopic RLC circuit. We find that the quantum fluctuation of charge decreases with time, oppositely,the quantum fluctuation of current increases with time monotonously. Therefore there is a squeezing effect in the circuit.If some more charge devices are used in the mesoscopic-damped circuit, the quantum noise can be reduced. We also findthat uncertainty relation of charge and current periodically varies with the period π/2 in the under-damped case.     

一种锰铜压阻测量新方法

 简单分析了几种常用的恒流供电锰铜压阻测量方法，并对这些测试方法的特点和不足进行了讨论。最后介绍一种利用数字示波器进行高保真高精度测量的方法，利用此法不仅提高了压力测量的精度，并且把小阻值锰铜压力计的测量范围向低端扩展到0.17 GPa。     

Investigation of annealing effects on the structural, magnetic and transport properties of Co/GaAs(0 0 1) thin films

Present paper deals with the structural, magnetic and transport studies of as-deposited as well as annealed Co/GaAs(0 0 1) thin film at different temperatures. The X-ray diffraction measurements show oriented growth of as-deposited Co film in the hcp (0 0 2) direction. However, the sample annealed at higher temperatures shows formation of ternary Co₂GaAs phase at the interface. Corresponding magnetic and transport measurements show decrement in magnetization and resistivity with annealing temperatures. The observed reductions in magnetization and resistivity values are mainly attributed to the formation of ternary Co₂GaAs phase at the interface.     

Volume Effect of Bound States in Quark-Gluon Plasma

Bound states, such as qq and q(q), may exist in quark-gluon plasma. As the system is at high density,the volume of the bound states may evoke a reduction in the phase space. We introduce an extended bag model to investigate qualitatively the volume effect on the properties of the system. We find a limit temperature where the bound states start to be completely melted.     

Investigations of He implantation and subsequent annealing effects in InP

The influence of 70 keV He⁺ ion implantation and subsequent annealing of Cz-indium phosphide (InP) samples has been investigated using a slow positron beam-based Doppler broadening spectrometer. Three samples with ion fluences of 1 × 10¹⁶, 5 × 10¹⁶ and 1 × 10¹⁷ cm⁻² were studied in the as-implanted condition as well as after annealing at 640 °C for times between 5 and 40 min. It was found that the line-shape parameter of the positron-electron annihilation peak in the implanted layer increases after 5 min annealing, then after longer annealing times it starts to decline gradually until it reaches a value close to the value of the as-grown sample. This implies that vacancy-like defects can be created in InP by He implantation followed by short-thermal annealing at T > 600 °C. Comparison of the results with a study where cavities were observed in He-implanted InP has been carried out.     

Effect of oxygen exposure on the magnetic properties of ultrathin Co/Ge(1 1 1) films

Influences of oxygen exposure on the magnetic properties of Co/Ge(1 1 1) ultrathin films have been investigated by surface magneto-optic Kerr effect technique. As the oxygen exposure increases on Co/Ge(1 1 1) films, their magnetic properties could be modified. As an example for 15 ML Co/Ge(1 1 1) films, the coercivity increases from 730 to 920 Oe and the remanence Kerr intensity is reduced for 500 Langmuir (L) of oxygen exposure. Corresponding compositions analyzed by Auger electron spectroscopy measurement shows that the amount of oxygen on the surface layers increases with increasing the oxygen exposure time. Oxygen distributes on the topmost layers of the film. The adsorbed oxygen influences the electronic density of states of Co and results in the changes of the magnetic properties. Besides, the appearance of O/Co/Ge interface could modify the stress anisotropy, and as a result the coercivity of ultrathin Co/Ge(1 1 1) film is enhanced.     

Stability control of the electrooptic effect with new maleimide copolymers containing photoreactive tricyanopyrrolidene‐based chromophores

New photocrosslinkable maleimide copolymers have been synthesized by the attachment of a tricyanopyrrolidene‐based chromophore. The 2‐(3‐cyano‐4‐(2‐{4‐[hexyl‐(6‐hydroxy‐hexyl)‐amino]‐phenyl}‐vinyl)‐5‐oxo‐1‐{4‐[4‐(3‐oxo‐3‐phenyl‐propenyl)‐ phenoxy]‐butyl}‐1,5‐dihydro‐pyrrol‐2‐ylidene)‐malononitrile chromophore exhibits nonlinear optical activity and contains a chalcone moiety that is sensitive to UV light (λ = 330–360 nm) for crosslink formation. The maleimide monomers have also been functionalized with chalcone moieties. The resultant copolymers exhibit great processability, and one of them shows a maximum electrooptic coefficient of 90 pm/V at 1300 nm. We could control the thermal stability of the electrooptic coefficient with the newly synthesized photoreactive copolymers successfully. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 531–542, 2007     

Andreev-Fano Effect in a Hybrid Normal-Metal/Superconductor Interferometer

We report on a new type of Fano effect, named as Andreev-Fano effect, in a hybrid normal-metal/supeeconductor (N/S) interferometer embedded with a quantum dot. Compared with the conventional Fano effect, AndreevFano effect has some new features related to the characteristics of Andreev reflection. In the Iinear response regime, the line shape is the square of the conventional Fano shape, while in the nonlinear transport, a sharp resonant structure is superposed on an expanded interference pattern, which is qualitatively different from the conventional Fano effect. The phase dependence of the hybrid N/S interferometer is also distinguished from those of all-N or all-S interferometers.